FeRAM Design Engineer
Dresden, Saxony
Permanent
Competitive depending on experience
V-179258
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Ane Bauer
Analog | Mixed Signal | RFIC design
An exciting opportunity has become available in an emerging Non Volatile Memory solutions for stand-alone and embedded applications.
Your responsibilities will be:
Your responsibilities will be:
- Responsible for the design and development of emerging Ferroelectric Hafnium Oxide memory products
- Define memory chip architecture with the best Power-Performance-Area tradeoff
- Design and development of analog circuits for NVM memories such as sense amps, decoders, data path, etc.
- Work with Product Engineers to implement the desired test features to guarantee proper device testability
- M.Sc. / Ph.D. in electrical engineering
- 10 years of experience in FRAM or DRAM design
- Familiarity with industry-standard design and simulation tools (e.g., Cadence® DFII, Virtuoso, Spice simulator, Verilog-A)
- Good knowledge of CMOS technology