Senior Principal Engineer in Power Semiconductor Devices - (SiC/GaN/Si)

Munich, Bavaria


Excellent salary circa €90k to €120k


We are seeking a talented Senior Principal Device Engineer to join our client's team in Nuremberg.

 In this role, you will play a key part in developing and improving our future generation of Power Device products such as SiC, GaN and Si.

Using TCAD software, you will be responsible for creating simulations to develop and optimize semiconductor process technologies and devices.

As a Principal Senior Device Engineer, your main responsibilities will include:
  • Designing SiC devices using TCAD from concept to simulation
  • Demonstrating a deep understanding of the fundamental device physics and architecture of SiC or GaN technology
  • Collaborating with production and development teams
  • Providing technical expertise and innovative ideas
  • Debugging device-related issues and proposing effective solutions
  • Understanding the fundamental requirements for devices and engaging stakeholders
The ideal candidate will have a degree in Electronics Engineering, Physics, or a related field and a proven track record in the following:
  • Experience in using TCAD and layout tools
  • Deep knowledge of device physics, structure, electrical operations, fab process & packaging of power technologies
  • Experience with device analysis and failure analysis
  • Understanding of the challenges involved in developing Power Devices, including participating in risk analysis
  • Ability to support planning, organizing, and controlling of projects while adhering to plans and budgets, as well as reporting on progress
  • Strong collaboration skills, whether working within an immediate team or outside of R&D
If you are interested in this Principal Senior Device Engineer role, please apply with an up-to-date CV and contact information.
Apply now