Senior RF IC Design Engineer

London (Greater), England


£85k - £100k + bonus and RSUs


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An opportunity has arisen for a highly successful company supplying the cellular industry. They have a new requirement for a Senior/Principal RF IC Design power Amplifier engineer based at their design centre North London.

Working as part of a small but dedicated team, in this role the Senior RF IC Design Engineer will be leading RF IC Designs for wireless communications and will be involved in the design of power amplifiers, switches and low noise amplifiers for WLAN using BiCMOS which is essential to this role. SiGe HBT, GaAs and GaN is also used and is an advantage.

You will be performing detailed circuit design and simulation and driving detailed IC layout, lab evaluation and back fitting of designs.

Experience is required in RF IC Design specifically in PA (power amplifier) design and systems architecture in the multi-GHz frequency range and the successful applicant will have at least 8 years experience from within a similar role including experience in switches and LNA circuits, Agilent ADS, GoldenGate and Cadence Virtuoso design tools. Knowledge in ESD protection techniques, bias and detector circuit design and filter/matching design techniques is ideal.

You will be working with IC layout and lab evaluation teams and will be responsible for giving technical presentations and data summaries. Experience with RF test and measurement equipment and an understanding of WiFi technology is ideal. 

You will be an excellent communicator who has a proven history of delivering production products and familiarity with all stages of the product lifecycle, able to generate clear technical presentations.

Contact Leon today to apply.

Applicants with experience in, RF IC Design, PA, Power Amplifiers, switches, BiCMOS, LNAs, WLAN, SiGe HBT devices, GaAs, GaN, Semiconductors, multi-GHz frequency, cellular, wireless, mobile, ESD, ADS, Goldengate and Cadence will be considered for this role.